unisonic technologies co., MMBT5401 pnp epitaxial silicon transistor www.unisonic.com.tw 1 copyright ? 2005 unisonic technologies co., qw-r206-011.c high voltage switching transistor features *collector-emitter voltage: v ceo =-150v *collector dissipation: pc(max)=350mw *high current gain marking 2l sot-23 1 2 3 *pb-free plating product number:MMBT5401l pin configuration pin no. pin name 1 emitter 2 base 3 collector ordering information order number normal lead free package packing MMBT5401-ae3-r MMBT5401l-ae3-r sot-23 tape reel
MMBT5401 pnp epitaxial silicon transistor unisonic technologies co., ltd 2 www.unisonic.com.tw qw-r206-011.c absoluate maxium ratings (ta = 25 ) parameter symbol ratings unit collector -base voltage v cbo -160 v collector -emitter voltage v ceo -150 v emitter -base voltage v ebo -5 v dc collector current i c -600 ma power dissipation p d 350 mw operating temperature t j +150 storage temperature t stg -40 ~ +150 electrical characteristics (ta= 25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =-100 a, i e =0 -160 v collector-emitter breakdown voltage v ceo i c =-1ma, i b =0 -150 v emitter-base breakdown voltage v ebo i e =-10 a, i c =0 -6 v collector cut-off current i cbo v cb =-120v, i e =0 -50 na emitter cut-off current i ebo v be =-3v, ic=0 -50 na dc current gain(note) h fe v ce =-5v, ic=-1ma v ce =-5v, ic=-10ma v ce =-5v, ic=-50ma 80 80 80 400 collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma i c =50ma, i b =5ma -0.2 -0.5 v base-emitter saturation voltage v be(sat) i c =-10ma, i b =-1ma i c =-50ma, i b =-5ma 1 1 v current gain bandwidth product f t v ce =-10v, ic=-10ma, f=100mhz 100 400 mhz output capacitance c ob v cb =-10v, i e =0, f=1mhz 6.0 pf noise figure n f i c =-0.25ma, v ce =-5v r s =1k ? , f=10hz ~ 15.7khz 8 db note: pulse test: pw<300 s, duty cycle<2% classification of hfe rank a b c range 80-170 150-240 200-400
MMBT5401 pnp epitaxial silicon transistor unisonic technologies co., ltd 3 www.unisonic.com.tw qw-r206-011.c typical characterics fig.2 dc current gain ic,collector current (ma) h fe , dc current gain 10 2 10 1 10 0 10 3 -10 3 -10 2 -10 1 -10 0 -10 -1 v ce =-5v fig.3 base-emitter on voltage i c,collect or current (ma) base-emitter voltage (v) 0 -0.2 -0.4 -0.6 -0.8 -1.0 v ce =-5v saturation voltage (v) fig.4 saturation voltage fig.5 current gain -bandwidth product fig.1 collector output capacitance v ce (sat ) v be (sat) ic=10*i b 10 3 current gain-bandwidth product,f t (mhz) 10 0 10 1 10 2 v ce =-10v collector-base voltage (v) cob,capacitance (pf) -10 0 0 4 8 12 f=1mhz i e =0 -10 -1 -10 -2 -10 1 -10 2 16 20 -10 1 -10 2 -10 3 -10 0 ic,collector current (ma) -10 3 -10 2 -10 1 -10 0 -10 -1 ic,collector current (ma) -10 3 -10 2 -10 1 -10 0 -10 -1 -10 0 -10 1
MMBT5401 pnp epitaxial silicon transistor unisonic technologies co., ltd 4 www.unisonic.com.tw qw-r206-011.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
